Electrical and Computer Engineering Publications
Research in Electrical and Computer Engineering Publications falls into eight broad and interlaced areas. These research areas are applied electrostatics and electromagnetics, biomedical systems, computer-assisted medical interventions, communication systems and data networking, microsystems and digital signal processing, power systems engineering, robotics and control and software engineering.
Submissions from 2004
Intrinsic and light induced gap states in a-Si:H materials and solar cells - Effects of microstructure, C. R. Wronski, J. M. Pearce, J. Deng, V. Vlahos, and R. W. Collins
Submissions from 2003
A Brief History of the Object-Oriented Approach, Luiz Fernando Capretz
Personality Types in Software Engineering, Luiz Fernando Capretz
The Challenges of CASE Design Integration in the Telecommunication Application Domain, Luiz Fernando Capretz
3D User Interface for a File Management System, Luiz Fernando Capretz and David Carter
Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry, R. W. Collins, A. S. Ferlauto, G. M. Ferreira, Chi Chen, Joohyun Koh, R. J. Koval, Yeeheng Lee, J. M. Pearce, and C. R. Wronski
Application of Deposition Phase Diagrams for the Optimization of a-Si:H-Based Materials and Solar Cells, R. W. Collins, A. S. Ferlauto, G. M. Ferreira, Joohyun Koh, Chi Chen, R. J. Koval, J. M. Pearce, C. R. Wronski, M. M. Al-Jassim, and K. M. Jones
Thickness evolution of the microstructure of si:h films in the amorphous-to-microcrystalline phase transition region, R. W. Collins, G. M. Ferreira, A. S. Ferlauto, R. J. Koval, J. M. Pearce, C. R. Wronski, M. M. Al-Jassim, and K. M. Jones
Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells, J. Deng, J. M. Pearce, R. J. Koval, V. Vlahos, R. W. Collins, and C. R. Wronskia
Carrier transport and recombination in a-Si:H p-i-n solar cells in dark and under illumination, J. Deng, J. M. Pearce, V. Vlahos, R. J. Koval, R. W. Collins, and C. R. Wronski
Evolution of Crystallinity in Mixed-Phase (a+μc)-Si:H as Determined by Real Time Spectroscopic Ellipsometry, A. S. Ferlauto, G. M. Ferreira, R. J. Koval, J. M. Pearce, C. R. Wronski, R. W. Collins, M. M. Al-Jassim, and K. M. Jones
UML Extensions for Real-Time Control Systems, Qimin Gao, Lyndon Brown, and Luiz Fernando Capretz
Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge, J. M. Pearce, J. Deng, R. W. Collins, and C. R. Wronski
Light induced changes in two distinct defect states at and below midgap in a-Si:H, J. M. Pearce, J. Deng, V. Vlahos, R. W. Collins, and C. R. Wronski
Student inquiries into neglected research for a sustainable society: Communication and application, Joshua Pearce and Chris Russill
Recombination in n-i-p (substrate) a-Si:H solar cells with silicon carbide and protocrystalline p-layers, V. Vlahos, J. Deng, J. M. Pearce, R. J. Koval, G. M. Ferreira, R. W. Collins, and C. R. Wronski
Submissions from 2002
Implications of MBTI in Software Engineering Education, Luiz Fernando Capretz
Thickness evolution of the microstructural and optical properties of Si:H films in the amorphous-to-microcrystalline phase transition region, A. S. Ferlauto, G. M. Ferreira, R. J. Koval, J. M. Pearce, C. R. Wronski, R. W. Collins, M. M. Al-Jassim, and K. M. Jones
Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics, A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, Xunming Deng, and Gautam Ganguly
Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers, R. J. Koval, Chi Chen, G. M. Ferreira, A. S. Ferlauto, J. M. Pearce, P. I. Rovira, C. R. Wronski, and R. W. Collins
Protocrystalline Si:H p-type layers for maximization of the open circuit voltage in a-Si:H n-i-p solar cells, R. J. Koval, Chi Chen, G. M. Ferreira, A. S. Ferlauto, J. M. Pearce, P. I. Rovira, C. R. Wronski, and R. W. Collins
Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: Effects on the performance of p-i-n solar cells, R. J. Koval, A. S. Ferlauto, J. M. Pearce, R. W. Collins, and C. R. Wronski
Microstructurally engineered p-layers for obtaining high open-circuit voltages in a-Si:H n-i-p solar cells, R. J. Koval, J. M. Pearce, Chi Chen, G. M. Ferreira, A. S. Ferlauto, R. W. Collins, and C. R. Wronski
Correlation of light-induced changes in a-Si:H films with characteristics of corresponding solar cells, J. M. Pearce, R. J. Koval, R. W. Collins, C. R. Wronski, M. M. Al-Jassim, and K. M. Jones
Net energy analysis for sustainable energy production from silicon based solar cells, Joshua Pearce and Andrew Lau