"Analytical model for the optical functions of amorphous semiconductors" by A. S. Ferlauto, G. M. Ferreira et al.
 

Electrical and Computer Engineering Publications

Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells

Document Type

Conference Proceeding

Publication Date

5-1-2004

Volume

455-456

Journal

Thin Solid Films

First Page

388

URL with Digital Object Identifier

10.1016/j.tsf.2003.11.234

Last Page

392

Abstract

We have developed a Kramers-Kronig consistent analytical expression to fit the dielectric functions (ε1, ε2) of hydrogenated amorphous silicon (a-Si:H)-based alloys measured using a combination of photoconductivity, transmission and reflection, and ellipsometric spectroscopies. The alloys of interest include amorphous silicon-germanium (a-Si1-xGex:H) and silicon-carbon (a-Si 1-xCx:H), with optical bandgaps ranging from ~1.30 to 1.95 eV. The fit can be performed simultaneously throughout the following regions: (i) the sub-bandgap (or Urbach tail) region where the absorption coefficient increases exponentially with photon energy, (ii) the band-to-band onset region where transitions are assumed to occur between parabolic bands with constant dipole matrix element, and (iii) the above-bandgap region where a Lorentz oscillator model is applicable. We describe an approach whereby, from a single accessible measure of the optical bandgap, (ε1, ε2) can be generated for a sample set consisting of optimum electronic quality a-Si:H-based alloys prepared by plasma-enhanced chemical vapor deposition. © 2003 Elsevier B.V. All rights reserved.

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