Electrical and Computer Engineering Publications
Carrier transport and recombination in a-Si:H p-i-n solar cells in dark and under illumination
Document Type
Conference Proceeding
Publication Date
1-1-2003
Volume
762
Journal
Materials Research Society Symposium - Proceedings
First Page
303
URL with Digital Object Identifier
10.1557/proc-762-a3.4
Last Page
308
Abstract
A study has been carried out on the forward bias dark current and the short circuit current open circuit voltage characteristics of a-Si:H p-i-n solar cells over wide range of illumination intensities. Results are presented with superposition of these characteristics over extended current voltage regimes. This and the observed separation between these characteristics are consistent with the arguments presented based on first principle arguments. The conclusions drawn about the role of photo-generated carrier lifetimes, the densities of defects and the potential barriers in the i-layers adjacent to the n and p contacts are confirmed by numerical simulations. The key role of these potential barriers to the split in the characteristics offer new insight into both why the lack of superposition has been observed and the erroneous conclusions drawn about carrier transport for a-Si:H solar cells in the dark and under illumination.