Electrical and Computer Engineering Publications
Evolution of Crystallinity in Mixed-Phase (a+μc)-Si:H as Determined by Real Time Spectroscopic Ellipsometry
Document Type
Conference Proceeding
Publication Date
1-1-2003
Volume
762
Journal
Materials Research Society Symposium - Proceedings
First Page
539
URL with Digital Object Identifier
10.1557/proc-762-a5.10
Last Page
544
Abstract
The ability to characterize the phase of the intrinsic (i) layers incorporated into amorphous silicon [a-Si:H] and microcrystalline silicon [μc-Si:H] thin film solar cells is critically important for cell optimization. In our research, a new method has been developed to extract the thickness evolution of the (μc-Si:H volume fraction in mixed phase amorphous + microcrystalline silicon [(a+μc)-Si:H] i-layers. This method is based on real time spectroscopic ellipsometry measurements performed during plasma-enhanced chemical vapor deposition of the films. In the analysis, the thickness at which crystallites first nucleate from the a-Si:H phase can be estimated, as well as the nucleation density and microcrystallite cone angle. The results correlate well with structural and solar cell measurements.