Fundamental transport properties in silicon quantum structures
Abstract
In the field of silicon photonics, there is an effort to bridge the gap between electrical and optical signals on a single platform, creating a need for Si-based light sources. In this project, Si quantum structures – Si quantum wells and quantum dots in SiO2 were fabricated via solid state precipitation methods. Their properties were studied using X-ray photoelectron spectroscopy, photoluminescence and I-V measurements. Rutherford backscattering spectroscopy was used for depth analysis in monitoring the Si distribution. Different electrical transport mechanisms were explored to understand how an ensemble of silicon QD’s or a silicon quantum well behaves in an SiO2 matrix, with conduction via oxide tunneling and hopping effects. Additionally, we quantified the defect density in epitaxially-grown Si and Ge thin films via RBS channeling, and correlated it with the Debye Temperature measured via low energy electron diffraction to assess the potential use of LEED as a technique for defect analysis.