Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions

Authors

Joshua M. Pearce, Pennsylvania State UniversityFollow
Randy J. Koval, Pennsylvania State University
Andre S. Ferlauto, Pennsylvania State University
Robert W. Collins, Pennsylvania State University
Christopher R. Wronski, Pennsylvania State University
Jeffrey Yang, United Solar Systems Corp.
Subbhendu Guha, United Solar Systems Corp.

Document Type

Article

Publication Date

11-6-2000

Volume

77

Issue

19

Journal

Applied Physics Letters

First Page

3093

URL with Digital Object Identifier

10.1063/1.1323550

Last Page

3095

Abstract

Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current-voltage (JD-V) and short-circuit current-open-circuit voltage (Jsc-Voc) characteristics of hydrogenated amorphous-silicon (a-Si:H) p-i-n and n-i-p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc-Voc characteristics at low illumination intensities. © 2000 American Institute of Physics.