Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: Effects on the performance of p-i-n solar cells
Journal of Non-Crystalline Solids
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Insights into the growth processes and microstructural evolution for intrinsic (i) hydrogenated silicon (Si:H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. Numerical modeling of the J-V characteristics and their temperature dependences support the RTSE results and provide new information about the optoelectronic properties of the i-layer materials. Experimental results are presented that strongly suggest changes in the mobility gap of the i-layer materials as their microstructure evolves with thickness, further confirming the important effect of the hydrogen dilution ratio R(R ≡ [H2]/[SiH4]) on the transitions from the amorphous to the microcrystalline phase in plasma-enhanced chemical vapor deposition (PECVD). © 2002 Elsevier Science B.V. All rights reserved.