Electrical and Computer Engineering Publications

Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells

Document Type

Article

Publication Date

11-7-2005

Volume

87

Issue

19

Journal

Applied Physics Letters

First Page

1

URL with Digital Object Identifier

10.1063/1.2126802

Last Page

3

Abstract

We have applied double p -type amorphous silicon-carbide (p-a-SiC:H) layer structures to pin-type protocrystalline silicon (pc-Si:H) multilayer solar cells. The less-pronounced initial short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current-voltage (JD -V) and short-circuit current-open-circuit voltage (Jsc - Voc) characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the pi interface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector. © 2005 American Institute of Physics.

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