Contributions of D0 and non-D0 gap states to the kinetics of light induced degradation of amorphous silicon under 1 sun illumination
Materials Research Society Symposium - Proceedings
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Light induced changes to 1 sun degraded steady state (DSS) have been investigated on hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells and corresponding films fabricated with and without hydrogen dilution of silane. Striking similarities are found for the degradation kinetics, between the electron mobility lifetime (μτ) products and the corresponding fill factors (FF). These correlations that exist for both intrinsic materials at temperatures between 25 and 100°C, are present for the DSS as well as in the kinetics, which exhibit distinctly different dependence on temperature. No such correlations are present between μτ, FF and densities of D0 defects, measured with subgap absorption α(E) at 1.2 eV, and electron spin resonance (ESR). The creation of non-D0 defects is also clearly indicated by the temperature dependence of the kinetics and the changes in the shape of α(E) with the results suggesting the presence of more than one mechanism for the creation of light induced defects associated with the Staebler-Wronski effect (SWE).