Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
Applied Physics Letters
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Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current-voltage (JD-V) and short-circuit current-open-circuit voltage (Jsc-Voc) characteristics of hydrogenated amorphous-silicon (a-Si:H) p-i-n and n-i-p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc-Voc characteristics at low illumination intensities. © 2000 American Institute of Physics.