Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells
Applied Physics Letters
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A study on the absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers was presented. Forward bias current-voltage characteristics were studied for both p-i-n (superstrate) and n-i-p (substrate) solar cell structures having p/i interface layers and different thickness i-layers. It was found that the various JD-V characteristics were consistent with i-layers having continuous distributions of states versus energy across the gap as well as homogeneous densities of defects versus position across the device structure.