Electrical and Computer Engineering Publications

Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge

Document Type

Article

Publication Date

11-3-2003

Volume

83

Issue

18

Journal

Applied Physics Letters

First Page

3725

URL with Digital Object Identifier

10.1063/1.1624637

Last Page

3727

Abstract

Light-induced (LI) degradation in hydrogenated amorphous silicon (a-Si:H) was studied. Contributions to the α(hv) of multiple defect states at and below midgap were addressed by analyzing the evolution of the entire spectra. Two distinctly different light induced defect states centered around 1.0 and 1.2 eV from the conduction band (CB) edge were clearly identified and their evolution found to be consistent with the corresponding changes in μτ.

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