Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge
Applied Physics Letters
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Light-induced (LI) degradation in hydrogenated amorphous silicon (a-Si:H) was studied. Contributions to the α(hv) of multiple defect states at and below midgap were addressed by analyzing the evolution of the entire spectra. Two distinctly different light induced defect states centered around 1.0 and 1.2 eV from the conduction band (CB) edge were clearly identified and their evolution found to be consistent with the corresponding changes in μτ.