Date of Award
1990
Degree Type
Dissertation
Degree Name
Doctor of Philosophy
Abstract
Post-hydrogenation effect on disordered silicon material made by different methods has been studied. It has been found that post-hydrogenation can effectively improve the electrical properties of such material. No Staebler-Wronski effect has been found in these post-hydrogenated samples.;Two different hydrogenation processes performed by theta-pinched plasma gun and CW atom gun have been studied. Hydrogen profiling was carried out by {dollar}\sp{lcub}15{rcub}{dollar}N Nuclear Resonance Reaction method and Secondary Ion Mass Spectrometry. The density of silicon dangling bonds before and after hydrogenation has been studied by Electron Spin Resonance (ESR) method. Hydrogen diffusion in silicon has also been studied in great detail. A "Limited Flux Model" for hydrogen diffusion in silicon has been proposed.
Recommended Citation
Wu, Xingwei, "Posthydrogenation Of Silicon Thin Films" (1990). Digitized Theses. 1912.
https://ir.lib.uwo.ca/digitizedtheses/1912