Degree
Master of Science
Program
Physics
Supervisor
Dr. Peter Simpson
Abstract
The effects of interface and vacancy defects on silicon quantum dot (Si-QD) growth are investigated using measurements of Time Resolved Photoluminescence (TRPL), Photoluminescence (PL) Spectroscopy and Electron Paramagnetic Resonance (EPR). Thermally grown SiO2 thin films (280nm) were irradiated with high energy (400keV – 1MeV) silicon ions in order to introduce defects into the Si-QD growth layer of SiO2. A noticeable increase in PL emission intensity is seen with the highest energy pre-implanted sample over a single implant sample. TRPL results show increased radiative lifetimes for the lower energy (400keV) pre-implant while little or no difference is seen in TRPL results between the single implant and the higher energy implanted samples. The origin of increased PL emission intensity and a trend towards shorter radiative lifetimes with increased implant energy in TRPL measurements are believed to be due to defect-mediated Si-QD growth in high energy pre-implanted samples.
Recommended Citation
Phelan, John, "Investigating the Influence of Interface and Vacancy Defects on the Growth of Silicon Quantum Dots in SiO2" (2013). Electronic Thesis and Dissertation Repository. 1669.
https://ir.lib.uwo.ca/etd/1669